2
Freescale Semiconductor
RF Product Device Data
MRFE6P9220HR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
3B (Minimum)
Machine Model (per EIA/JESD22-A115)
C (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(4)
(VDS
= 66 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(4)
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(1)
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(1)
(VDS
= 10 Vdc, I
D
= 240
μAdc)
VGS(th)
1.5
2.2
3
Vdc
Gate Quiescent Voltage
(3)
(VDD
= 28 Vdc, I
D
= 1600 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3
3.8
Vdc
Drain-Source On-Voltage
(1)
(VGS
= 10 Vdc, I
D
= 2.4 Adc)
VDS(on)
0.1
0.22
0.3
Vdc
Dynamic Characteristics (2)
Reverse Transfer Capacitance
(4)
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
1.22
?
pF
Output Capacitance
(4)
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
217
?
pF
Input Capacitance
(VDS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Ciss
?
1060
?
pF
Functional Tests (3)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1600 mA, P
out
= 47 W Avg. N-CDMA, f = 880 MHz,
Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
18.5
20
23
dB
Drain Efficiency
ηD
28
30
?
%
Adjacent Channel Power Ratio
ACPR
?
-46
-44.5
dBc
Input Return Loss
IRL
?
-14
-9
dB
1. Each side of the device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push-pull configuration.
4. Drains are tied together internally as this is a total device value.
(continued)
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